advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v small package outline r ds(on) 80m surface mount device i d - 3.2a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice 200805212 parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 linear derating factor 1.38 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 -2.6 pulsed drain current 1 -10 1 AP2305AGN-HF rating - 30 12 -3.2 0.01 halogen-free product advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. the sot-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23
ap2305agn-h f electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-3.2a - - 60 m v gs =-4.5v, i d =-3.0a - - 80 m v gs =-2.5v, i d =-2.0a - - 150 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-3.0a - 9 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-3.2a - 10 18 nc q gs gate-source charge v ds =-24v - 1.8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.6 - nc t d(on) turn-on delay time 2 v ds =-15v - 7 - ns t r rise time i d =-3.2a - 15 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 21 - ns t f fall time r d =4.6 -15- ns c iss input capacitance v gs =0v - 735 1325 pf c oss output capacitance v ds =-25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v trr reverse recovery time 2 i s =-3.2a, v gs =0v, - 24 - ns qrr reverse recovery charge di/dt=100a/s - 19 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 12v 100
a p2305agn-h f 65m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -3.0a v gs = -4.5v 0 10 20 30 40 0123456789 -v ds , drain-to-source voltage (v) -i d , drain current (a) -4.0v t a =25 o c -5.0v -3.0v v g = -2.0v 0 4 8 12 16 20 24 28 32 36 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) v g = -2.0v -4.0v -5.0v -3.0v t a =150 o c 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 100 200 300 024681012 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -1.0a t a =25 o c
ap2305agn-h f 65m fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 270 /w 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -3.2a v ds = -24v
package outline : sot-23 millimeters min nom max a 1.00 1.15 1.30 a1 0.00 -- 0.10 a2 0.10 0.15 0.25 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 d 2.70 2.90 3.10 e 2.40 2.65 3.00 e1 1.40 1.50 1.60 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-23 advanced power electronics corp. symbols n7yy part number : n7 d e1 e e d1 a a1 a2 date code : yy yy:2004,2008,2012? yy :2003,2007,2011? y y:2002,2006,2010? yy :2001,2005,2009? 5
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